The Institute of Physics has successfully developed a 6-inch silicon carbide single crystal substrate

Silicon carbide (SiC) single crystal is a wide bandgap semiconductor material and has many characteristics such as large forbidden band width, strong critical breakdown field, high thermal conductivity, and high saturation drift speed, and is widely used for making high temperature, high frequency and High-power electronics. In addition, due to the small lattice mismatch between SiC and gallium nitride (GaN), SiC single crystals are ideal substrate materials for GaN-based LEDs, Schottky diodes, MOSFETs, IGBTs, and HEMTs. In order to reduce the cost of the device, the downstream industry has put forward large-scale requirements for SiC single crystal substrates. At present, there are 6-inch (150 mm) products on the international market, and the market share is expected to increase year by year.

Institute of Physics, Chinese Academy of Sciences/Beijing Advanced Laboratory for Advanced Materials and Structure Analysis, National Laboratory for Condensed Matter Physics (Group A02, Functional Crystal Research and Application Center) has long been engaged in the research of SiC single crystal growth. Innovation and exploration have acquired a set of independent intellectual property rights such as SiC single crystal growth equipment, crystal growth and processing technology. The successfully developed 2-inch SiC single crystal substrate was first industrialized in China, and successfully developed 3 inch and 4 inch SiC single crystal substrates, achieving batch production and sales.

In November 2014, the team worked with Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd. to successfully solve the 6-inch diameter expansion technology and wafer processing technology, and successfully developed a 6-inch SiC single crystal substrate. The Raman spectroscopy test showed that the grown SiC crystal is of 4H crystal form, and the mean-width-at-half-maximum of the X-ray diffraction rocking curve of the (0004) crystal surface is only 27.2 arc seconds, indicating that the crystal quality of the crystal is very good. This achievement marks the Institute's research and development of SiC single crystal growth has reached the international advanced level. The successful development of a 6-inch SiC single crystal substrate provides the material basis for the localization of high-performance SiC-based electronic devices.

Related research has been supported by relevant departments such as the Ministry of Science and Technology, the National Natural Science Foundation of China, the Collaborative Innovation Center, the Chinese Academy of Sciences, the Beijing Science and Technology Commission, and the Xinjiang Production and Construction Corps Science and Technology Bureau.

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