High-performance power devices are commonly used in high-voltage, high-current, and high-frequency devices, and energy-saving effects are obvious. In particular, silicon carbide devices have lower energy losses than conventional silicon devices. However, due to some inherent defects between the gate insulating layers of silicon carbide, silicon carbide transistors have high resistance and poor stability, which affects their performance. These defects between the gate insulating layers are mainly caused by some impurities, atomic excess or insufficient on the Sic interface.
The picture on the right shows the oxidation reaction at the interface between silicon oxide and silicon carbide. The desorption of by-product carbon during the reaction acts as carbon monoxide to effectively reduce the formation of interfacial defects. The figure on the left is the interface state density map of 4H-SiC and SiO2. The horizontal axis shows the energy level of the edge defect state of the silicon carbide conduction band.
Professor Koji Kita of the Institute of Engineering of the University of Tokyo found that when manufacturing a gate insulating film, the by-product carbon in the reaction process is treated as carbon monoxide to significantly reduce the interface defect density. The researchers used this method to test on a metal-oxide-semiconductor structure test body, and obtained the interface defect with the lowest density.
This technology avoids additional processing procedures such as the addition of hydrogen-containing gas when improving the surface quality of silicon carbide, and the operation process is relatively simple; it has taken a big step in energy saving of electric power transmission, electric vehicles and factory machinery and equipment. (Chinese superhard material network translation: Wang Xian)
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